Calculated temperature-dependent resistance in low density 2D hole gases in GaAs heterostructure

Details Calculated temperature-dependent resistance in low density 2D hole gases in GaAs heterostructure Calculated temperature-dependent resistance in low density 2D hole gases in GaAs heterostructure

2000-01-05

arxiv.org/abs/cond-mat/0001057v1

Phys. Rev. B 61, R7838 (2000)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.61.R7838

We calculate the low temperature resistivity in low density 2D hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated resistance, which shows striking temperature dependent non-monotonicity arising from the competition among screening, nondegeneracy, and phonon effects, is in excellent agreement with recent experimental data.

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