Physics – Condensed Matter – Strongly Correlated Electrons
Scientific paper
2005-10-03
Japanese Journal of Applied Physics, 45(3A) 1602 (2006)
Physics
Condensed Matter
Strongly Correlated Electrons
16 pages, 4 figures
Scientific paper
10.1143/JJAP.45.1602
A multilayer perovskite thin film resistive memory device has been developed comprised of: a Pr0.7Ca0.3MnO3 (PCMO) perovskite oxide epitaxial layer on a YBCO bottom thin film electrode; a thin yttria stabilized zirconia (YSZ) buffer layer grown on the PCMO layer, and a gold thin film top electrode. The multi-layer thin film lattice structure has been characterized by XRD and TEM analyses showing a high quality heterostructure. I-AFM analysis indicated nano granular conductivity distributed uniformly throughout the PCMO film surface. With the addition of the YSZ buffer layer, the pulse voltage needed to switch the device is significantly reduced and the resistance-switching ratio is increased compared to a non-buffered resistance memory device, which is very important for the device fabrication. The magnetic field effect on the multilayer structure resistance at various temperatures shows CMR behavior for both high and low resistance states implying a bulk material component to the switch behavior.
Chen Qing
Chen Xin
Ignatiev Alex
Wu Naijuan
Zhang Yue
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