Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

Details Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

2008-05-28

arxiv.org/abs/0805.4244v1

Appl. Phys. Lett. 93, 072102 (2008)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, submitted to APL

Scientific paper

10.1063/1.2960356

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.

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