Boundary spin Hall effect in a two-dimensional semiconductor system with Rashba spin-orbit coupling

Details Boundary spin Hall effect in a two-dimensional semiconductor system with Rashba spin-orbit coupling Boundary spin Hall effect in a two-dimensional semiconductor system with Rashba spin-orbit coupling

2006-10-06

arxiv.org/abs/cond-mat/0610190v2

Phys. Rev. B 76 (2007) 085319

Physics

Condensed Matter

Materials Science

6 pages, 1 figure

Scientific paper

10.1103/PhysRevB.76.085319

We derive boundary conditions for the coupled spin-charge diffusion equations at a transmitting interface between two-dimensional electron systems with different strengths of the Rashba spin-orbit (SO) coupling $\alpha$, and an electric field parallel to the interface. We consider the limit where the spin-diffusion length l_s is long compared to the electron mean free path l, and assume that $\alpha$ changes discontinuously on the scale of l_s. We find that the spin density is also discontinuous on the scale of l_s. In the case where the electron mobility is constant across the interface, this leads to the complete suppression of the expected spin injection from a region with $\alpha\neq0$ into a non-SO region with $\alpha=0$.

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