Bound hole states in a ferromagnetic (Ga,Mn)As environment

Details Bound hole states in a ferromagnetic (Ga,Mn)As environment Bound hole states in a ferromagnetic (Ga,Mn)As environment

2007-04-16

arxiv.org/abs/0704.2028v1

PHYSICAL REVIEW B Volume: 76 Issue: 12 Article Number: 125206 Published: 2007

Physics

Condensed Matter

Materials Science

9 pages, 10 figures

Scientific paper

10.1103/PhysRevB.76.035204

A numerical technique is developed to solve the Luttinger-Kohn equation for impurity states directly in k-space and is applied to calculate bound hole wave functions in a ferromagnetic (Ga,Mn)As host. The rich properties of the band structure of an arbitrarily strained, ferromagnetic zinc-blende semiconductor yields various features which have direct impact on the detailed shape of a valence band hole bound to an active impurity. The role of strain is discussed on the basis of explicit calculations of bound hole states.

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