Bosonization Theory of Excitons in One-dimensional Narrow Gap Semiconductors

Details Bosonization Theory of Excitons in One-dimensional Narrow Gap Semiconductors Bosonization Theory of Excitons in One-dimensional Narrow Gap Semiconductors

2001-02-28

arxiv.org/abs/cond-mat/0102509v1

Phys. Rev. B, Vol.63 193308-1 (2001)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4pages, 1 figure, to appear in Phys. Rev. B Brief Reports

Scientific paper

10.1103/PhysRevB.63.193308

Excitons in one-dimensional narrow gap semiconductors of anti-crossing quantum Hall edge states are investigated using a bosonization method. The excitonic states are studied by mapping the problem into a non-integrable sine-Gordon type model. We also find that many-body interactions lead to a strong enhancement of the band gap. We have estimated when an exciton instability may occur.

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