Boosting electronic transport in carbon nanotubes by isotopic disorder

Details Boosting electronic transport in carbon nanotubes by isotopic disorder Boosting electronic transport in carbon nanotubes by isotopic disorder

2009-05-19

arxiv.org/abs/0905.3034v1

Physical Review Letters 102, 196801 (2009)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.102.196801

The current/voltage curve of metallic carbon nanotubes (CNTs) displays at high bias a sudden increase of the resistivity due to the scattering of electrons with phonons having an anomalously-high population (hot phonons). Here, we show that it is possible to improve the electrical performances of metallic CNTs by C13 isotope enrichment. In fact, isotopic disorder creates additional channels for the hot-phonon deexcitation, reduces their population and, thus, the nanotube high-bias differential-resistance. This is an extraordinary case where disorder improves the electronic transport.

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