Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

Details Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping Bond-specific reaction kinetics during the oxidation of (111) Si: Effect of n-type doping

2010-11-19

arxiv.org/abs/1011.4386v1

Physics

Condensed Matter

Materials Science

9 pages, 3 figures

Scientific paper

It is known that a higher concentration of free carriers leads to a higher oxide growth rate in the thermal oxidation of silicon. However, the role of electrons and holes in oxidation chemistry is not clear. Here, we report real-time second-harmonic-generation data on the oxidation of H-terminated (111)Si that reveal that high concentrations of electrons increase the chemical reactivity of the outer-layer Si-Si back bonds relative to the Si-H up bonds. However, the thicknesses of the natural oxides of all samples stabilize near 1 nm at room temperature, regardless of the chemical kinetics of the different bonds.

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