Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

Details Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As

2002-06-24

arxiv.org/abs/cond-mat/0206416v1

Appl. Phys. Lett. 81, 4029 (2002).

Physics

Condensed Matter

Materials Science

4 pages, 2 figures

Scientific paper

10.1063/1.1523160

We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn$^{2+}$ acceptors with a local moment $S=5/2$ and from non-magnetic compensating defects. In metallic samples Boltzmann transport theory with Golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition.

Affiliated with

Also associated with

No associations

Rating

Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-2652