Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire

Details Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire

2004-02-02

arxiv.org/abs/cond-mat/0402038v1

Appl. Phys. Lett. 84 (2004) 3486

Physics

Condensed Matter

Materials Science

12 pages (Figures included); To appear in 3rd May 2004 issue of Appl. Phys. Lett

Scientific paper

10.1063/1.1738172

Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50-keV Ga+ focused ion beam (FIB) in the fluence range of 1x1014 -2x10^16 ions cm^-2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor-acceptor pair (DAP) model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is made responsible for the shift. High temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies.

Affiliated with

Also associated with

No associations

Rating

Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Blue shift of yellow luminescence band in self-ion-implanted n-GaN nanowire will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-627049