Physics – Condensed Matter – Materials Science
Scientific paper
2005-04-22
Physics
Condensed Matter
Materials Science
13 pages, 4 figures. Jpn. J. Appl. Phys. in press
Scientific paper
10.1143/JJAP.44.L643
A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p-i-n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p-type ZnO layer, indicating that the electron injection from the n-type layer to the p-type layer dominates the current, giving rise to the radiative recombination in the p-type layer. The imbalance in charge injection is considered to originate from the lower majority carrier concentration in the p-type layer, which is one or two orders of magnitude lower than that in the n-type one. The current-voltage characteristics showed the presence of series resistance of several hundreds ohms, corresponding to the current spread resistance within the bottom n-type ZnO. The employment of conducting ZnO substrates may solve the latter problem.
Chichibu Shigefusa F.
Kawasaki Masashi
Kubota Masashi
Ohno Hideo
Ohtani Keita
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