Bit storage by $360^\circ$ domain walls in ferromagnetic nanorings

Details Bit storage by $360^\circ$ domain walls in ferromagnetic nanorings Bit storage by $360^\circ$ domain walls in ferromagnetic nanorings

2008-11-28

arxiv.org/abs/0811.4663v1

IEEE Trans. Magn. 45, 3207-3209 (2009).

Physics

Condensed Matter

Materials Science

Scientific paper

We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable 360$^\circ$ domain wall introduced into the ring. Switching between the two magnetization states is achieved by the current applied to a wire passing through the ring, whereby the $360^\circ$ domain wall splits into two charged $180^\circ$ walls, which then move to the opposite extreme of the ring to recombine into a $360^\circ$ wall of the opposite polarity.

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