Bipolar single-wall carbon nanotube field-effect transistor

Details Bipolar single-wall carbon nanotube field-effect transistor Bipolar single-wall carbon nanotube field-effect transistor

2002-09-04

arxiv.org/abs/cond-mat/0209081v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 4 figures

Scientific paper

We use a simultaneous flow of ethylene and hydrogen gases to grow single wall carbon nanotubes by chemical vapor deposition. Strong coupling to the gate is inferred from transport measurements for both metallic and semiconducting tubes. At low-temperatures, our samples act as single-electron transistors where the transport mechanism is mainly governed by Coulomb blockade. The measurements reveal very rich quantized energy level spectra spanning from valence to conduction band. The Coulomb diamonds have similar addition energies on both sides of the semiconducting gap. Signatures of subbands population has been observed.

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