Bipolar resistive switching in amorphous titanium oxide thin films

Details Bipolar resistive switching in amorphous titanium oxide thin films Bipolar resistive switching in amorphous titanium oxide thin films

2009-08-25

arxiv.org/abs/0908.3525v1

Physics

Condensed Matter

Materials Science

9 pages, 4 figures

Scientific paper

Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by a plasma-enhanced atomic layer deposition method between two aluminum electrodes. We found a bipolar resistive switching behavior in the high temperature region (> 140 K), and two activation energies of shallow traps, 0.055 eV and 0.126 eV in the ohmic current regime. We also proposed that the bipolar resistive switching of amorphous TiO2 thin films is governed by the transition of conduction mode from a bulk-limited SCLC model (Off state) to an interface-limited Schottky emission (On state), generated by the ionic movement of oxygen vacancies.

Affiliated with

Also associated with

No associations

Rating

Bipolar resistive switching in amorphous titanium oxide thin films does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Bipolar resistive switching in amorphous titanium oxide thin films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar resistive switching in amorphous titanium oxide thin films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-232736