Binding energy of negatively charged exciton in a semiconductor quantum well: the role of interface defects

Details Binding energy of negatively charged exciton in a semiconductor quantum well: the role of interface defects Binding energy of negatively charged exciton in a semiconductor quantum well: the role of interface defects

2001-09-26

arxiv.org/abs/cond-mat/0109502v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 3 figures - OECS7 Proceeding

Scientific paper

We present a model to take into account the interface defects contribution on
the binding energy of charged exciton in GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum
wells. The dependence of the binding energy gain and of the trion size on the
quantum well width are variationally calculated. We show that the trion is more
sensitive to interface defects than the exciton.

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