Binding energy of localized biexcitons in quantum wells

Details Binding energy of localized biexcitons in quantum wells Binding energy of localized biexcitons in quantum wells

1998-05-14

arxiv.org/abs/cond-mat/9805166v1

Physics

Condensed Matter

Strongly Correlated Electrons

9 pages, 4 figures

Scientific paper

A variational calculation of the ground state energy of a biexciton in a GaAs/AlGaAs quantum well is presented. The well width fluctuations leading to trapping of the biexcitons are modeled by a parabolic potential. The results obtained for different well widths are compared with recent experimental data. Good agreement is obtained both for the biexciton binding energy and for the Haynes factor. We find that the structure of a biexciton is similar to the one of the H_2 molecule.

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