Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch

Details Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch

1999-12-09

arxiv.org/abs/cond-mat/9912147v1

Physics

Condensed Matter

Materials Science

20 pages, 5 figures. PACS Classification: 72.15.Nj; 72.90+y; 73.40.Gk Keywords: Quantum wire, nanostructure, binding energy

Scientific paper

10.1016/S1386-9477(00)00125-9

Within the framework of staircase infinitely deep (SIW) potential well model the effect of dielectric constant mismatch between the size-quantized semiconducting wire, coating and surrounding environment on impurity binding energy is considered. Calculations are done in both the absence and presence of magnetic field applied along the wire axis. By the variation method the dependences of binding energy of hydrogen-like impurity located on the wire axis on the alloy concentration, effective mass ratio, dielectric constant mismatch and magnetic field are found for the GaAs-Ga_{1-x}Al_{x}AS system.

Affiliated with

Also associated with

No associations

Rating

Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Binding Energy of Impurity in a Size Quantized Coated Semiconductor Wire: Role of the Dielectric-Constant Mismatch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-23607