Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

Details Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields Binding energies of hydrogen-like impurities in a semiconductor in intense terahertz laser fields

2003-04-11

arxiv.org/abs/cond-mat/0304258v1

Physics

Condensed Matter

Materials Science

14 pages, 4 figures

Scientific paper

10.1142/S021797920301834X

A detailed theoretical study is presented for the influence of linearly
polarised intense terahertz (THz) laser radiation on energy states of
hydrogen-like impurities in semiconductors. The dependence of the binding
energy for 1s and 2p states on intensity and frequency of the THz radiation has
been examined.

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