Bimodal Counting Statistics in Single Electron Tunneling through a Quantum Dot

Details Bimodal Counting Statistics in Single Electron Tunneling through a Quantum Dot Bimodal Counting Statistics in Single Electron Tunneling through a Quantum Dot

2007-05-16

arxiv.org/abs/0705.2420v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.76.155307

We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain-voltage for several consecutive electron numbers on the quantum dot. For certain configurations we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts we relate this to a slow switching between different electron configurations on the quantum dot.

Affiliated with

Also associated with

No associations

Rating

Bimodal Counting Statistics in Single Electron Tunneling through a Quantum Dot does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Bimodal Counting Statistics in Single Electron Tunneling through a Quantum Dot, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bimodal Counting Statistics in Single Electron Tunneling through a Quantum Dot will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-670763