Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene

Details Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene Bilayer graphene inclusions in rotational-stacked multilayer epitaxial graphene

2010-10-08

arxiv.org/abs/1010.1767v2

Phys. Rev. B 83, 125302 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 2 figures, to appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.83.125302

Additional component in multi-layer epitaxial graphene grown on the C-terminated surface of SiC, which exhibits the characteristic electronic properties of a AB-stacked graphene bilayer, is identified in magneto-optical response of this material. We show that these inclusions represent a well-defined platform for accurate magneto-spectroscopy of unperturbed graphene bilayers.

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