Bilayer graphene dual-gate nanodevice: An ab initio simulation

Details Bilayer graphene dual-gate nanodevice: An ab initio simulation Bilayer graphene dual-gate nanodevice: An ab initio simulation

2011-09-30

arxiv.org/abs/1109.6929v1

Phys. Rev. B 84, 113412 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.84.113412

We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external electrical field we show that even for gate lengths up 100 Ang., a non zero current is exhibited. The results can be explained by the presence of a tunneling regime due the remanescent states in the gap. We also discuss the conditions to reach the charge neutrality point in a system free of defects and extrinsic carrier doping.

Affiliated with

Also associated with

No associations

Rating

Bilayer graphene dual-gate nanodevice: An ab initio simulation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Bilayer graphene dual-gate nanodevice: An ab initio simulation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bilayer graphene dual-gate nanodevice: An ab initio simulation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-670007