Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

Details Biased bilayer graphene: semiconductor with a gap tunable by electric field effect Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

2006-11-13

arxiv.org/abs/cond-mat/0611342v2

Phys. Rev. Lett. 99, 216802 (2007)

Physics

Condensed Matter

Materials Science

4 pages, 5 figures. To appear in Physical Review Letters, November 2007

Scientific paper

10.1103/PhysRevLett.99.216802

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to mid-infrared energies to a value as large as 0.3 eV by using fields of < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

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