Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes

Details Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes Bias voltage controlled magnetization switch in ferromagnetic semiconductor resonant tunneling diodes

2004-09-05

arxiv.org/abs/cond-mat/0409106v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

20 pages, 7 figures, corrected typo in caption of figure 1

Scientific paper

10.1103/PhysRevB.71.245306

We predict that the Curie temperature of a ferromagnetic resonant tunneling diode will decrease abruptly, by approximately a factor of two, when the downstream chemical potential falls below the quantum well resonance energy. This property follows from elementary quantum transport theory notions combined with a mean field description of diluted magnetic semiconductor ferromagnetism. We illustrate this effect by solving coupled non-equilibrium Green's function, magnetic mean-field, and electrostatic Poisson equations self-consistently to predict the bias voltage and temperature dependence of the magnetization of a model system.

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