Bias-induced destruction of ferromagnetism and disorder effects in GaMnAs heterostructures

Details Bias-induced destruction of ferromagnetism and disorder effects in GaMnAs heterostructures Bias-induced destruction of ferromagnetism and disorder effects in GaMnAs heterostructures

2011-08-10

arxiv.org/abs/1108.2108v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

8 pages, 8 figures

Scientific paper

The magneto-electric properties of resonant tunneling double barrier structures using GaMnAs for the quantum well is investigated within a self-consistent Green's function approach and a tight-binding electronic structure model. The magnetic state of the well is determined self-consistently by the tunneling current which controls the hole spin density and, hence, the degree of exchange splitting of the subbands inside the well. Prompted by recent experiments we compare model systems of increasing defect concentration (substitutional disorder) regarding their I-V curve, magnetic state, and spin polarization. We predict that, near resonance, the ferromagnetic order which may be present at zero bias in the GaMnAs well tends to be destroyed. Resonance peaks are found to be more sensitive to disorder than ferromagnetic ordering and spin polarization of the steady-state current.

Affiliated with

Also associated with

No associations

Rating

Bias-induced destruction of ferromagnetism and disorder effects in GaMnAs heterostructures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Bias-induced destruction of ferromagnetism and disorder effects in GaMnAs heterostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bias-induced destruction of ferromagnetism and disorder effects in GaMnAs heterostructures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-664861