Bias-Dependent Generation and Quenching of Defects in Pentacene

Details Bias-Dependent Generation and Quenching of Defects in Pentacene Bias-Dependent Generation and Quenching of Defects in Pentacene

2003-12-31

arxiv.org/abs/cond-mat/0312721v1

Physics

Condensed Matter

Materials Science

10 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.93.076601

We describe a defect in pentacene single crystals that is created by bias stress and persists at room temperature for an hour in the dark but only seconds with 420nm illumination. The defect gives rise to a hole trap at Ev + 0.38eV and causes metastable transport effects at room temperature. Creation and decay rates of the hole trap have a 0.67eV activation energy with a small (108 s-1) prefactor, suggesting that atomic motion plays a key role in the generation and quenching process.

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