Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization

Details Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization Bias-dependent electron spin lifetimes in n-GaAs and the role of donor impact ionization

2006-05-30

arxiv.org/abs/cond-mat/0605742v1

Applied Physics Letters v89, p102102 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.2345608

In bulk n-GaAs epilayers doped near the metal-insulator transition, we study the evolution of electron spin lifetime $\tau_s$ as a function of applied lateral electrical bias $E_x$. $\tau_s$ is measured via the Hanle effect using magneto-optical Kerr rotation. At low temperatures (T<10 K, where electrons are partially localized and $\tau_s > 100$ ns at zero bias), a marked collapse of $\tau_s$ is observed when $E_x$ exceeds the donor impact ionization threshold at $\sim$10 V/cm. A steep increase in the concentration of warm delocalized electrons -- subject to Dyakonov-Perel spin relaxation -- accounts for the rapid collapse of $\tau_s$, and strongly influences electron spin transport in this regime.

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