Bias Dependence and Electrical Breakdown of Small Diameter Single-Walled Carbon Nanotubes

Details Bias Dependence and Electrical Breakdown of Small Diameter Single-Walled Carbon Nanotubes Bias Dependence and Electrical Breakdown of Small Diameter Single-Walled Carbon Nanotubes

2004-10-13

arxiv.org/abs/cond-mat/0410336v1

Physics

Condensed Matter

Materials Science

submitted to Journal of Applied Physics

Scientific paper

10.1063/1.1807523

The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The convenient fabrication of thousands of properly contacted SWCNTs was possible by growth on electrode structures and subsequent electroless palladium deposition. Almost all of the measured SWCNTs showed at least weak gate dependence at room temperature. Large differences in the conductance and breakdown behavior have been found for "normal" semiconducting SWCNTs and small band-gap semiconducting (SGS) SWCNTs.

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