Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

Details Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact

2011-04-14

arxiv.org/abs/1104.2658v2

Appl. Phys. Lett. 99, 012113 (2011)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures

Scientific paper

10.1063/1.3607480

We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.

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