Bias and temperature dependence of the noise in a single electron transistor

Details Bias and temperature dependence of the noise in a single electron transistor Bias and temperature dependence of the noise in a single electron transistor

1998-10-08

arxiv.org/abs/cond-mat/9810103v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

16 pages, 9 figures (EPS)

Scientific paper

10.1007/s100510050730

A single electron transistor based on Al-AlO_x-Nb tunnel junctions was fabricated by shadow evaporation and in situ barrier formation. Its output current noise was measured, using a transimpedance amplifier setup, as a function of bias voltage, gain, and temperature, in the frequency range 1...300 Hz. The spot noise at 10 Hz is dominated by a gain dependent component, indicating that the main noise contribution comes from fluctuations at the input of the transistor. Deviations from ideal input charge noise behaviour are found in the form of a bias dependence of the differential charge equivalent noise, i. e. the derivative of current noise with respect to gain. The temperature dependence of this effect could indicate that heating is activating the noise sources, and that they are located inside or in the near vicinity of the junctions.

Affiliated with

Also associated with

No associations

Rating

Bias and temperature dependence of the noise in a single electron transistor does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Bias and temperature dependence of the noise in a single electron transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bias and temperature dependence of the noise in a single electron transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-508766