Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor

Details Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor

1999-11-02

arxiv.org/abs/cond-mat/9911014v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Revtex, 4 pages, 3 figures (eps), Definition of spin pilarization changed to standard definition in GMR, some straight forward

Scientific paper

10.1103/PhysRevB.62.R4790

We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical device geometry the degree of spin-polarization of the current is limited to less than 0.1%, only. The change in device resistance for parallel and antiparallel magnetization of the contacts is up to quadratically smaller, and will thus be difficult to detect.

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