Bandgap recovery and electron doping on cleaved [100] surfaces of divalent semi-metal hexaborides

Details Bandgap recovery and electron doping on cleaved [100] surfaces of divalent semi-metal hexaborides Bandgap recovery and electron doping on cleaved [100] surfaces of divalent semi-metal hexaborides

2000-09-02

arxiv.org/abs/cond-mat/0009022v2

Physics

Condensed Matter

Strongly Correlated Electrons

This paper is withdrawn and has been superceded by cond-mat/0107429, showing the band gap to be a bulk property

Scientific paper

This paper has been withdrawn by the authors due to new theoretical evidence and experimental proof that the semiconducting bandgap reported in this paper and ascribed to a surface region is in fact a bulk property of divalent hexaborides. As reported in J. D. Denlinger et al., cond-mat/0107429, which supercedes this paper, bulk-sensitive boron K-edge soft x-ray emission provides a complementary confirmation of the X-point band gap identified by angle-resolved photoemission.

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