Bandgap opening in metallic carbon nanotubes due to silicon impurities

Details Bandgap opening in metallic carbon nanotubes due to silicon impurities Bandgap opening in metallic carbon nanotubes due to silicon impurities

2009-12-21

arxiv.org/abs/0912.4090v2

Physics

Condensed Matter

Materials Science

3 eps figures, extended text

Scientific paper

Controlling the bandgap of carbon nanostructures is key to the development and mainstream application of carbon-based nanoelectronic devices. We report density functional theory calculations of the effect of silicon impurities on the electronic properties of carbon nanotubes (CNTs). We have found that Si adatoms open up a bandgap in intrinsically metallic CNTs even when the linear density of Si atoms is low enough that they do not create a bonded adatom chain. The bandgap opened in metallic CNTs can range between 0.10 eV and 0.47 eV, depending on adsorption site, linear density of Si adatoms, and CNT chirality.

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