Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2009-04-15
Appl. Phys. Lett. 95, 112102 (2009)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
4 pages, 4 figures, submitted to Phys. Rev. Lett.
Scientific paper
10.1063/1.3224914
Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any prerequisite material parameter. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)0.51In0.49P single-barrier heterostructures. The bandgaps of AlGaAs and AlGaInP are measured with a resolution of several meV at 4.2 K. For the GaAs/AlGaAs interface, the measured Gamma band offset ratio is 60.4:39.6 (+/-2%). For the GaAs/AlGaInP interface, this ratio varies with the Al mole fraction and is distributed more in the valence band. A non-monotonic Al composition dependence of the conduction band offset at the GaAs/AlGaInP interface is observed in the indirect-gap regime.
Dupuis Russell D.
Gossard Arthur. C.
Huang Yong
Lu Hong
Narayanamurti Venkatesh
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