Band structure related wave function symmetry of amphoteric Si dopants in GaAs

Details Band structure related wave function symmetry of amphoteric Si dopants in GaAs Band structure related wave function symmetry of amphoteric Si dopants in GaAs

2007-11-29

arxiv.org/abs/0711.4755v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 3 figures

Scientific paper

10.1016/j.ssc.2008.01.004

Autocompensated Si-doped GaAs is studied with cross-sectional scanning tunneling spectroscopy (X-STS). The local electronic contrasts of substitutional Si(Ga) donors and Si(As) acceptors under the (110) cleavage plane are imaged with high resolution. Si(Ga) donor atoms exhibit radially symmetric contrasts. Si(As) acceptors have anisotropic features. The anisotropic acceptor contrasts are traced back to a tunnel process at the valence band edge. They reflect the probability density distribution of the localized acceptor hole state.

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