Band Structure, Phonon Scattering and the Ultimate Performance of Single-Walled Carbon Nanotube Transistors

Details Band Structure, Phonon Scattering and the Ultimate Performance of Single-Walled Carbon Nanotube Transistors Band Structure, Phonon Scattering and the Ultimate Performance of Single-Walled Carbon Nanotube Transistors

2005-04-12

arxiv.org/abs/cond-mat/0504297v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.95.146805

Semiconducting single-walled carbon nanotubes are studied in the diffusive transport regime. The peak mobility is found to scale with the square of the nanotube diameter and inversely with temperature. The maximum conductance, corrected for the contacts, is linear in the diameter and inverse temperature. These results are in good agreement with theoretical predictions for acoustic phonon scattering in combination with the unusual band structure of nanotubes. These measurements set the upper bound for the performance of nanotube transistors operating in the diffusive regime.

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