Band structure effects in nitrogen K-edge resonant inelastic X ray scattering from GaN

Details Band structure effects in nitrogen K-edge resonant inelastic X ray scattering from GaN Band structure effects in nitrogen K-edge resonant inelastic X ray scattering from GaN

2004-04-18

arxiv.org/abs/cond-mat/0404421v1

Physics

Condensed Matter

Materials Science

3 pages, 1 figure, in press with Rapids of physica status solidi

Scientific paper

10.1002/pssb.200409040

Systematic experimental data on resonant inelastic X-ray scattering (RIXS) in GaN near the N K-edge are presented for the first time. Excitation energy dependence of the spectral structures manifests the band structure effects originating from momentum selectivity of the RIXS process. This finding allows obtaining k-resolved band structure information for GaN crystals and nanostructures.

Affiliated with

Also associated with

No associations

Rating

Band structure effects in nitrogen K-edge resonant inelastic X ray scattering from GaN does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Band structure effects in nitrogen K-edge resonant inelastic X ray scattering from GaN, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Band structure effects in nitrogen K-edge resonant inelastic X ray scattering from GaN will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-275321