Band structure analysis of the conduction-band mass anisotropy in 6H and 4H SiC

Details Band structure analysis of the conduction-band mass anisotropy in 6H and 4H SiC Band structure analysis of the conduction-band mass anisotropy in 6H and 4H SiC

1995-08-02

arxiv.org/abs/mtrl-th/9508004v1

Physics

Condensed Matter

Materials Science

5 pages including 4 postscript figures incorporated with epsfig figs. available as part 2: sicfig.uu self-extracting file to a

Scientific paper

10.1103/PhysRevB.52.R2249

The band structures of 6H and 4H SiC calculated by means of the FP-LMTO
method are used to determine the effective mass tensors for their
conduction-band minima. The results are shown to be consistent with recent
optically detected cyclotron resonance measurements and predict an unusual band
filling dependence for 6H-SiC.

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