Band offsets and stability of BeTe/ZnSe (100) heterojunctions

Details Band offsets and stability of BeTe/ZnSe (100) heterojunctions Band offsets and stability of BeTe/ZnSe (100) heterojunctions

2000-07-11

arxiv.org/abs/cond-mat/0007180v1

Physics

Condensed Matter

Materials Science

RevTeX 5 pages, 3 embedded figures

Scientific paper

10.1103/PhysRevB.62.R16302

We present ab-initio studies of band offsets, formation energy, and stability of (100) heterojunctions between (Zn,Be)(Se,Te) zincblende compounds, and in particular of the lattice-matched BeTe/ZnSe interface. Equal band offsets are found at Be/Se and Zn/Te abrupt interfaces, as well as at mixed interfaces, in agreement with the established understanding of band offsets at isovalent heterojunctions. Thermodynamical arguments suggest that islands of non-nominal composition may form at the interface, causing offset variations over about 0.8 eV depending on growth conditions. Our findings reconcile recent experiments on BeTe/ZnSe with the accepted theoretical description.

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