Band-like transport and trapping in TMTSF Single Crystal Transistors

Details Band-like transport and trapping in TMTSF Single Crystal Transistors Band-like transport and trapping in TMTSF Single Crystal Transistors

2009-07-13

arxiv.org/abs/0907.2219v1

Physics

Condensed Matter

Materials Science

4 pages, 4 figures and 1 table

Scientific paper

We perform a combined experimental and theoretical study of tetramethyltetraselenafulvalene (TMTSF) single-crystal field-effect transistors, whose electrical characteristics exhibit clear signatures of the intrinsic transport properties of the material. We introduce a simple, well-defined model based on physical parameters and we successfully reproduce quantitatively the device properties as a function of temperature and carrier density. The analysis allows its internal consistency to be checked, and enables the reliable extraction of the density and characteristic energy of shallow and deep traps in the material. Our findings indicate that shallow traps originate from electrostatic potential fluctuations generated by charges fixed in the deep traps.

Affiliated with

Also associated with

No associations

Rating

Band-like transport and trapping in TMTSF Single Crystal Transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Band-like transport and trapping in TMTSF Single Crystal Transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Band-like transport and trapping in TMTSF Single Crystal Transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-101306