Band gap engineering by functionalization of BN sheet

Physics – Condensed Matter – Materials Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

15 pages, 2 figures PRB(submitted)

Scientific paper

From first principles calculations, we investigate the stability and physical properties of single layer h-BN sheet chemically functionalized by various groups viz. H, F, OH, CH3, CHO, CN, NH2 etc. We find that full functionalization of h-BN sheet with these groups lead to decrease in its electronic band gap, albeit to different magnitudes varying from 0.3 eV to 3.1 eV, depending upon the dopant group. Functionalization by CHO group, in particular, leads to a sharp decrease in the electronic band gap of the pristine BN sheet to ~ 0.3 eV, which is congenial for its usage in transistor based devices. The phonon calculations on these sheets show that frequencies corresponding to all their vibrational modes are real (positive), thereby suggesting their inherent stability. The chemisorption energies of these groups to the B and N atoms of the sheet are found to lie in the range of 1.5 -6 eV.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Band gap engineering by functionalization of BN sheet does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Band gap engineering by functionalization of BN sheet, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Band gap engineering by functionalization of BN sheet will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-695587

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.