Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots

Details Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots

2005-01-05

arxiv.org/abs/cond-mat/0501090v1

Physics

Condensed Matter

Materials Science

9 pages, 17 figures

Scientific paper

10.1103/PhysRevB.72.205311

We have calculated band-edge energies for most combinations of zincblende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb and InSb in which one material is strained to the other. Calculations were done for three different geometries, quantum wells, wires, and dots, and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified novel and interesting material combinations, such as artificial donors, that have not been experimentally realized. The calculations were perfomed using strain-dependent k-dot-p theory and provide a comprehensive overview of band structures for strained heterostructures.

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