Band bending and quasi-2DEG in the metallized $β$-SiC(001) surface

Details Band bending and quasi-2DEG in the metallized $β$-SiC(001) surface Band bending and quasi-2DEG in the metallized $β$-SiC(001) surface

2008-09-03

arxiv.org/abs/0809.0578v1

Physics

Condensed Matter

Materials Science

accepted for publication in physica status solidi - Rapid Research Letters

Scientific paper

10.1002/pssr.200802166

We study the mechanism leading to the metallization of the $\beta$-SiC(001) Si-rich surface induced by hydrogen adsorption. We analyze the effects of band bending and demonstrate the existence of a quasi-2D electron gas, which originates from the donation of electrons from adsorbed hydrogen to bulk conduction states. We also provide a simple model that captures the main features of the results of first-principles calculations, and uncovers the basic physics of the process.

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