Ballistic vs Diffusive Transport in Current-Induced Magnetization Switching

Details Ballistic vs Diffusive Transport in Current-Induced Magnetization Switching Ballistic vs Diffusive Transport in Current-Induced Magnetization Switching

2007-08-23

arxiv.org/abs/0708.3229v2

Physics

Condensed Matter

Materials Science

11 pages, including 1 figure

Scientific paper

10.1103/PhysRevB.76.220408

We test whether current-induced magnetization switching due to spin-transfer-torque in ferromagnetic/non-magnetic/ferromagnetic (F/N/F) trilayers changes significantly when scattering within the N-metal layers is changed from ballistic to diffusive. Here ballistic corresponds to a ratio r = lambda/t greater than or equal to 3 for a Cu spacer layer, and diffusive to r = lambda/t less than or equal to 0.4 for a CuGe alloy spacer layer, where lambda is the mean-free-path in the N-layer of fixed thickness t = 10 nm. The average switching currents for the alloy spacer layer are only modestly larger than those for Cu. The best available model predicts a much greater sensitivity of the switching currents to diffuse scattering in the spacer layer than we see.

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