Ballistic transport in induced one-dimensional hole systems

Details Ballistic transport in induced one-dimensional hole systems Ballistic transport in induced one-dimensional hole systems

2006-07-20

arxiv.org/abs/cond-mat/0607509v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 4 figures (accepted to Applied Physics Letters)

Scientific paper

10.1063/1.2337525

We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation doping eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs > 10.

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