Ballistic transport and boundary scattering in InSb/InxAl1-xSb mesoscopic devices

Details Ballistic transport and boundary scattering in InSb/InxAl1-xSb mesoscopic devices Ballistic transport and boundary scattering in InSb/InxAl1-xSb mesoscopic devices

2010-09-20

arxiv.org/abs/1009.3823v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 7 figures

Scientific paper

We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.

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