Ballistic Spin Injection from Fe into ZnSe and GaAs with a (001), (111), and (110) orientation

Details Ballistic Spin Injection from Fe into ZnSe and GaAs with a (001), (111), and (110) orientation Ballistic Spin Injection from Fe into ZnSe and GaAs with a (001), (111), and (110) orientation

2003-08-07

arxiv.org/abs/cond-mat/0308138v1

J. Phys.: Condens. Matter 16 No 26 (7 July 2004) 4643-4659

Physics

Condensed Matter

Materials Science

12 pages, 18 figures

Scientific paper

10.1088/0953-8984/16/26/001

We present first-principles calculations of ballistic spin injection in Fe/GaAs and Fe/ZnSe junctions with orientation (001), (111), and (110). We find that the symmetry mismatch of the Fe minority-spin states with the semiconductor conduction states can lead to extremely high spin polarization of the current through the (001) interface for hot and thermal injection processes. Such a symmetry mismatch does not exist for the (111) and (110) interfaces, where smaller spin injection efficiencies are found. The presence of interface states is found to lower the current spin polarization, both with and without a Schottky barrier. Finally, a higher bias can also affect the spin injection efficiency.

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