Ballistic spin field-effect transistors: Multichannel effects

Details Ballistic spin field-effect transistors: Multichannel effects Ballistic spin field-effect transistors: Multichannel effects

2006-10-25

arxiv.org/abs/cond-mat/0610685v2

Phys. Rev. B 74, 195311 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

18 pages, 15 figures

Scientific paper

10.1103/PhysRevB.74.195311

We study a ballistic spin field-effect transistor (SFET) with special attention to the issue of multi-channel effects. The conductance modulation of the SFET as a function of the Rashba spin-orbit coupling strength is numerically examined for the number of channels ranging from a few to close to 100. Even with the ideal spin injector and collector, the conductance modulation ratio, defined as the ratio between the maximum and minimum conductances, decays rapidly and approaches one with the increase of the channel number. It turns out that the decay is considerably faster when the Rashba spin-orbit coupling is larger. Effects of the electronic coherence are also examined in the multi-channel regime and it is found that the coherent Fabry-Perot-like interference in the multi-channel regime gives rise to a nested peak structure. For a nonideal spin injector/collector structure, which consists of a conventional metallic ferromagnet-thin insulator-2DEG heterostructure, the Rashba-coupling-induced conductance modulation is strongly affected by large resonance peaks that arise from the electron confinement effect of the insulators. Finally scattering effects are briefly addressed and it is found that in the weakly diffusive regime, the positions of the resonance peaks fluctuate, making the conductance modulation signal sample-dependent.

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