Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET

Details Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET

1998-05-16

arxiv.org/abs/cond-mat/9805197v3

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

RevTeX file: 5 pages with 6 included PS/EPS files (21/5/98) Typographical error corrected 26/6/98

Scientific paper

We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without modulation doping. Electron mobilities at T=4.2 K and density 3 E11 /cm^2 exceed 4 E6 cm^2/Vs. At lower temperatures, there is an unusually large drop in scattering, such that the mobility becomes too high to measure in 100 micron samples. Below T=2.5 K, clear signatures of ballistic travel over path lengths in excess of 160 microns are observed in magnetic focusing experiments. Multiple reflections at the edges of the 2DEG indicate a high degree of specularity.

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