Ballistic Composite Fermions in Semiconductor Nanostructures

Details Ballistic Composite Fermions in Semiconductor Nanostructures Ballistic Composite Fermions in Semiconductor Nanostructures

1996-01-17

arxiv.org/abs/cond-mat/9601063v1

Physics

Condensed Matter

9 pages TeX 3.1415 C version 6.1, 3 PostScript figures

Scientific paper

10.1103/PhysRevB.53.9602

We report the results of two fundamental transport measurements at a Landau level filling factor $\nu$ of 1/2. The well known ballistic electron transport phenomena of quenching of the Hall effect in a mesoscopic cross-junction and negative magnetoresistance of a constriction are observed close to B~=~0 and $\nu~=~ 1/2$. The experimental results demonstrate semi-classical charge transport by composite fermions, which consist of electrons bound to an even number of flux quanta.

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