Backward diode composed of a metallic and semiconducting nanotube

Details Backward diode composed of a metallic and semiconducting nanotube Backward diode composed of a metallic and semiconducting nanotube

2001-06-04

arxiv.org/abs/cond-mat/0106040v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, RevTeX, uses epsf.sty

Scientific paper

10.1103/PhysRevB.64.201404

The conditions necessary for a nanotube junction connecting a metallic and semiconducting nanotube to rectify the current are theoretically investigated. A tight binding model is used for the analysis, which includes the Hartree-Fock approximation and the Green's function method. It is found that the junction has a behavior similar to the backward diode if the gate electrode is located nearby and the Fermi level of the semiconducting tube is near the gap. Such a junction would be advantageous since the required length for the rectification could be reduced.

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